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2SK3699-01MR Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3699-01MR Datasheet(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 TO-220F Item Symbol Ratings Unit Drain-source voltage VDS 900 VDSX *5 900 Continuous drain current ID ±3.7 Pulsed drain current ID(puls] ±14.8 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 3.7 Maximum Avalanche Energy EAS *1 171.1 Maximum Drain-Source dV/dt dVDS/dt *4 40 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 2.16 Tc=25°C 43 Operating and storage Tch +150 temperature range Tstg Isolation Voltage VISO *6 2000 Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=900V VGS=0V VDS=720V VGS=0V VGS=±30V ID=1.85A VGS=10V ID=1.85A VDS=25V VCC=600V ID=1.85A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 2.907 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=450V ID=3.7A VGS=10V L=22.9mH Tch=25°C IF=3.7A VGS=0V Tch=25°C IF=3.7A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W °C °C Vrms 900 3.0 5.0 25 250 100 3.31 4.30 24 430 650 60 90 3.5 5 19 29 711 32 48 17 26 16.5 24.8 6.4 9.6 3.7 5.6 3.7 0.9 1.50 1.0 4.0 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < Gate(G) Source(S) Drain(D) 200305 *4 VDS 900V *5 VGS=-30V *6 f=60Hz, t=60sec. < = *1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C = < |
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