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2MBI1200U4G-170 Datasheet(PDF) 4 Page - Fuji Electric |
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2MBI1200U4G-170 Datasheet(HTML) 4 Page - Fuji Electric |
4 / 6 page 4 2MBI1200U4G-170 4 IGBT Modules Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rgon=4.7Ω, Tj=125°C Transient thermal resistance (max.) 0 400 800 1200 1600 2000 2400 2800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward on voltage : VF [V] Tj=25°C Tj=125°C 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 400 800 1200 1600 2000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward current : IF [A] trr Irr 0.0001 0.0010 0.0100 0.1000 0.001 0.010 0.100 1.000 Pulse width : Pw [sec] FWD IGBT |
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