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2MBI800U4G-170 Datasheet(PDF) 1 Page - Fuji Electric |
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2MBI800U4G-170 Datasheet(HTML) 1 Page - Fuji Electric |
1 / 6 page 1 2MBI800U4G-170 IGBT Modules IGBT MODULE (U series) 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 1200 A Tc=80°C 800 Icp 1ms Tc=25°C 2400 Tc=80°C 1600 -Ic 800 -Ic pulse 1ms 1600 Collector power dissipation Pc 1 device 4800 W Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 3400 VAC Screw torque (*2) Mounting 5.75 N m Main Terminals 10 Sense Terminals 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Units min. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 1600 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 800mA 5.5 6.5 7.5 V Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE = 15V IC = 800A Tj=25°C - 2.47 2.64 V Tj=125°C - 2.87 - VCE (sat) (chip) Tj=25°C - 2.25 2.40 Tj=125°C - 2.65 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 75 - nF Turn-on time ton VCC = 900V, IC = 800A, VGE = ±15V, Tj = 125°C, Rgon = 8.2Ω, Rgoff = 3Ω - 3.10 - µs tr - 1.25 - Turn-off time toff - 1.45 - tf - 0.25 - Forward on voltage VF (main terminal) VGE = 0V IF = 800A Tj=25°C - 2.02 2.39 V Tj=125°C - 2.22 - VF (chip) Tj=25°C - 1.80 2.15 Tj=125°C - 2.00 - Reverse recovery time trr IF = 800A - 0.45 - µs Lead resistance, terminal-chip (*3) R lead - 0.27 - mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Units min. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.026 °C/W FWD - - 0.045 Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*4) - 0.006 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. |
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