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1MBH50-060 Datasheet(PDF) 4 Page - Fuji Electric |
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1MBH50-060 Datasheet(HTML) 4 Page - Fuji Electric |
4 / 5 page Collector-Emitter voltage : VCE [V] 10 Capacitance vs. Collector-Emitter voltage Tj=25°C 0 5 10 15 20 25 30 35 100 IGBT Module Switching time vs. RG Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C Dynamic input characteristics Tj=25°C Gate resistance : RG [ohm] 0 50 100 150 200 250 Gate charge : Qg [nC] 100 1000 10 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 Collector-Emitter voltage : VCE [V] 25 20 15 10 5 0 500 400 300 200 100 0 Switching time vs. RG Vcc=300V, Ic=50A, VGE=±15V, Tj=125°C Gate resistance : RG [ohm] 100 1000 10 Reversed biased safe operating area +VGE=15V, -VGE = 15V, Tj = 125°C, RG = 62 ohm < <> Typical short circuit capability Vcc=400V, RG=62 ohm, Tj=125°C 1000 600 500 400 300 200 100 0 5 10 15 20 25 Characteristics 1MBH50-060,1MBH50D-060 1MBH50-060, 1MBH50D-060 Gate voltage : VGE [V] 0 50 100 150 200 250 0 50 100 150 200 250 60 50 40 30 20 10 0 |
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