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CY62157EV30LL-45BVI Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62157EV30LL-45BVI Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 21 page CY62157EV30 MoBL® Document #: 38-05445 Rev. *I Page 9 of 21 Write Cycle No. 1 (WE Controlled) [25, 26, 27] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE VALID DATA tBW NOTE 28 CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE Notes 25. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 26. Data I/O is high impedance if OE = VIH. 27. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 28. During this period, the I/Os are in output state. Do not apply input signals. [+] Feedback |
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