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CY62128EV30LL-45ZXI Datasheet(PDF) 4 Page - Cypress Semiconductor |
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CY62128EV30LL-45ZXI Datasheet(HTML) 4 Page - Cypress Semiconductor |
4 / 18 page CY62128EV30 MoBL® Document #: 38-05579 Rev. *J Page 4 of 18 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied .......................................... –55 °C to +125 °C Supply voltage to ground potential .......................................–0.3 V to VCC(max) + 0.3 V DC voltage applied to outputs in high Z State [3, 4] ......................–0.3 V to VCC(max) + 0.3 V DC input voltage [3, 4] ...................–0.3 V to VCC(max) + 0.3 V Output current into outputs (LOW) ............................. 20 mA Static discharge voltage (MIL-STD-883, method 3015) ................................. > 2001 V Latch-up current .................................................... > 200 mA Operating Range Device Range Ambient Temperature VCC[5] CY62128EV30LL Industrial –40 °C to +85 °C 2.2 V to 3.6 V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 45 ns (Industrial) Unit Min Typ [6] Max VOH Output HIGH voltage IOH = –0.1 mA 2.0 – – V IOH = –1.0 mA, VCC > 2.70 V 2.4 – – V VOL Output LOW voltage IOL = 0.1 mA – – 0.4 V IOL = 2.1 mA, VCC > 2.70 V – – 0.4 V VIH Input HIGH voltage VCC = 2.2 V to 2.7 V 1.8 – VCC + 0.3 V V VCC= 2.7 V to 3.6 V 2.2 – VCC + 0.3 V V VIL Input LOW voltage VCC = 2.2 V to 2.7 V –0.3 – 0.6 V VCC= 2.7 V to 3.6 V –0.3 – 0.8 V IIX Input leakage current GND < VI < VCC –1 – +1 µA IOZ Output leakage current GND < VO < VCC, output disabled –1 – +1 µA ICC VCC operating supply current f = fmax = 1/tRC VCC = VCCmax IOUT = 0 mA CMOS levels –11 16 mA f = 1 MHz – 1.3 2.0 mA ISB1[7] Automatic CE power-down current — CMOS inputs CE1 > VCC0.2 V, CE2 < 0.2 V VIN > VCC – 0.2 V, VIN < 0.2 V f = fmax (address and data only), f = 0 (OE and WE), VCC = 3.60 V –14 µA ISB2[7] Automatic CE power-down current — CMOS inputs CE1 > VCC – 0.2 V, CE2 < 0.2 V VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = 3.60 V –14 µA Notes 3. VIL(min) = –2.0 V for pulse durations less than 20 ns. 4. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 5. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization. 6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 7. Chip enables (CE1 and CE2) must be at CMOS level to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating. [+] Feedback |
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