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CY14V104LA-BA45XI Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY14V104LA-BA45XI
Description  4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14V104LA-BA45XI Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY14V104LA
CY14V104NA
Document #: 001-53954 Rev. *F
Page 9 of 22
VIH
Input HIGH voltage
0.7 × VCCQ
–VCCQ + 0.3
V
VIL
Input LOW voltage
– 0.3
0.3 × VCCQ
V
VOH
Output HIGH voltage
IOUT = –1 mA
VCCQ – 0.45
V
VOL
Output LOW voltage
IOUT = 2 mA
0.45
V
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ [9]
Max
Unit
Data Retention and Endurance
Over the Operating Range
Parameter
Description
Min
Unit
DATAR
Data retention
20
Years
NVC
Non-volatile STORE operation
1,000
K
Capacitance
Parameter[12]
Description
Test Conditions
Max
Unit
CIN
Input capacitance (except BLE,
BHE and HSB)
TA = 25 C, f = 1 MHz, VCC = VCC (Typ), VCCQ = VCCQ (Typ)
7
pF
Input capacitance (for BLE, BHE
and HSB)
8pF
COUT
Output capacitance (except HSB)7
pF
Output capacitance (for HSB)8
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
Parameter[12]
Description
Test Conditions
48-ball FBGA Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and proce-
dures for measuring thermal impedance, in accordance
with EIA/JESD51.
46.09
C/W
JC
Thermal resistance
(junction to case)
7.84
C/W
Note
12. These parameters are guaranteed by design but not tested.
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