CY14V101LA-BA25XI datasheet(8/22 Pages) CYPRESS

Part #	CY14V101LA-BA25XI

Description	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

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Manufacturer	CYPRESS [Cypress Semiconductor]

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CY14V101LA

CY14V101NA

Document #: 001-53953 Rev. *H

Page 8 of 22

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................–65

C to +150 C

Maximum accumulated storage time:

At 150

C ambient temperature ...................... 1000 h

At 85

C ambient temperature ..................... 20 Years

Ambient temperature

with power applied ...................................–55

C to +150 C

Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V

Supply voltage on VCCQ relative to VSS ...... –0.5 V to 2.45 V

Voltage applied to outputs

in High Z State .................................. –0.5 V to VCCQ + 0.5 V

Input voltage ..................................... –0.5 V to VCCQ + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ............... –2.0 V to VCCQ + 2.0 V

Package power dissipation

capability (TA = 25 °C) ..................................................1.0 W

Surface mount Pb soldering

temperature (3 seconds) ..........................................+260

C

DC output current

(1 output at a time, 1s duration) ..................................15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) ......................... > 2001 V

Latch up current ................................................... > 140 mA

Operating Range

Range

Ambient

Temperature

VCC

VCCQ

Industrial

–40

C to +85 C 3.0 V to 3.6 V 1.65 V to 1.95 V

DC Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

Min

Typ [11]

Max

Unit

VCC

Power supply voltage

3.0

3.3

3.6

V

VCCQ

1.65

1.8

1.95

V

ICC1

Average VCC current

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

––

70

mA

––

52

mA

ICCQ1

Average VCCQ current

–

25

mA

––

15

mA

ICC2

Average VCC current during

STORE

All inputs don’t care, VCC = Max

Average current for duration tSTORE

––

10

mA

ICC3

Average VCC current at

tRC= 200 ns, VCC(Typ), 25 °C

All inputs cycling at CMOS levels.

Values obtained without output loads

(IOUT = 0 mA)

–35

–

mA

ICCQ3

Average VCCQ current at

tRC= 200 ns, VCCQ(Typ), 25 °C

–5

–

mA

ICC4

Average VCAP current during

AutoStore cycle

All inputs don’t care. Average current

for duration tSTORE

––

8

mA

ISB

VCC standby current

CE > (VCCQ – 0.2 V).

VIN < 0.2 V or > (VCCQ – 0.2 V).

Standby current level after

non-volatile cycle is complete. Inputs

are static. f = 0 MHz

––

8

mA

IIX[12]

Input leakage current

(except HSB)

VCCQ = Max, VSS < VIN < VCCQ

–1

–

+1

µA

Input leakage current (for HSB)VCCQ = Max, VSS < VIN < VCCQ

–100

–

+1

µA

Notes

11. Typical values are at 25 °C, VCC = VCC(Typ) and VCCQ= VCCQ(Typ). Not 100% tested.

12. The HSB pin has IOUT = –4 µA for VOH of 1.07 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

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