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CY14B256Q1A-SXIT Datasheet(PDF) 4 Page - Cypress Semiconductor |
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CY14B256Q1A-SXIT Datasheet(HTML) 4 Page - Cypress Semiconductor |
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4 / 33 page  CY14C256Q CY14B256Q CY14E256Q Document #: 001-65282 Rev. *B Page 4 of 33 Device Operation CY14X256Q is a 256-Kbit serial (SPI) nvSRAM memory with a nonvolatile element in each memory cell. All the reads and writes to nvSRAM happen to the SRAM, which gives nvSRAM the unique capability to handle infinite writes to the memory. The data in SRAM is secured by a STORE sequence which transfers the data in parallel to the nonvolatile QuantumTrap cells. A small capacitor (VCAP) is used to AutoStore the SRAM data in nonvolatile cells when power goes down providing power-down data security. The QuantumTrap nonvolatile elements built in the reliable SONOS technology make nvSRAM the ideal choice for secure data storage. The 256-Kbit memory array is organized as 32 K words × 8 bits. The memory can be accessed through a standard SPI interface that enables very high clock speeds up to 40 MHz with zero cycle delay read and write cycles. This nvSRAM chip also supports 104 MHz SPI access speed with a special instruction for read operation. This device supports SPI modes 0 and 3 (CPOL, CPHA = 0, 0 and 1, 1) and operates as SPI slave. The device is enabled using the Chip Select (CS) pin and accessed through Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. This device provides the feature for hardware and software write protection through the WP pin and WRDI instruction respectively along with mechanisms for block write protection (1/4, 1/2, or full array) using BP0 and BP1 pins in the Status Register. Further, the HOLD pin is used to suspend any serial communication without resetting the serial sequence. CY14X256Q uses the standard SPI opcodes for memory access. In addition to the general SPI instructions for read and write, it provides four special instructions that allow access to four nvSRAM specific functions: STORE, RECALL, AutoStore Disable (ASDISB), and AutoStore Enable (ASENB). The major benefit of nvSRAM over serial EEPROMs is that all reads and writes to nvSRAM are performed at the speed of SPI bus with zero cycle delay. Therefore, no wait time is required after any of the memory accesses. The STORE and RECALL operations need finite time to complete and all memory accesses are inhibited during this time. While a STORE or RECALL operation is in progress, the busy status of the device is indicated by the Hardware STORE Busy (HSB) pin and also reflected on the RDY bit of the Status Register. The device is available in three different pin configurations that enable you to choose a part which fits in best in their application. The feature summary is given in Table 1. SRAM Write All writes to nvSRAM are carried out on the SRAM and do not use up any endurance cycles of the nonvolatile memory. This allows you to perform infinite write operations. A write cycle is performed through the WRITE instruction. The WRITE instruction is issued through the SI pin of the nvSRAM and consists of the WRITE opcode, two bytes of address, and one byte of data. Write to nvSRAM is done at SPI bus speed with zero cycle delay. The device allows burst mode writes to be performed through SPI. This enables write operations on consecutive addresses without issuing a new WRITE instruction. When the last address in memory is reached in burst mode, the address rolls over to 0x0000 and the device continues to write. The SPI write cycle sequence is defined explicitly in the Memory Access section of SPI Protocol Description. SRAM Read A read cycle is performed at the SPI bus speed. The data is read out with zero cycle delay after the READ instruction is executed. READ instruction can be used upto 40 MHz clock speed. The READ instruction is issued through the SI pin of the nvSRAM and consists of the READ opcode and two bytes of address. The data is read out on the SO pin. A speed higher than 40 MHz (up to 104 MHz) requires FAST_READ instruction. The FAST_READ instruction is issued through the SI pin of the nvSRAM and consists of the FAST_READ opcode, two bytes of address, and one dummy byte. The data is read out on the SO pin. This device allows burst mode reads to be performed through SPI. This enables reads on consecutive addresses without issuing a new READ instruction. When the last address in memory is reached in burst mode read, the address rolls over to 0x0000 and the device continues to read. The SPI read cycle sequence is defined explicitly in the Memory Access section of SPI Protocol Description. STORE Operation STORE operation transfers the data from the SRAM to the nonvolatile QuantumTrap cells. The device STOREs data to the nonvolatile cells using one of the three STORE operations: AutoStore, activated on device power-down; Software STORE, activated by a STORE instruction; and Hardware STORE, activated by the HSB. During the STORE cycle, an erase of the previous nonvolatile data is first performed, followed by a program of the nonvolatile elements. After a STORE cycle is initiated, read/write to CY14X256Q is inhibited until the cycle is completed. The HSB signal or the RDY bit in the Status Register can be monitored by the system to detect if a STORE or Software RECALL cycle is in progress. The busy status of nvSRAM is indicated by HSB being pulled LOW or RDY bit being set to ‘1’. To avoid unnecessary nonvolatile STOREs, AutoStore and Hardware STORE operations are ignored unless at least one write operation has taken place since the most recent STORE or RECALL cycle. However, software initiated STORE cycles are performed regardless of whether a write operation has taken place. Table 1. Feature Summary Feature CY14X256Q1A CY14X256Q2A CY14X256Q3A WP Yes No Yes VCAP No Yes Yes HSB No No Yes AutoStore No Yes Yes Power-Up RECALL Yes Yes Yes Hardware STORE No No Yes Software STORE Yes Yes Yes |
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