CY14B108N-ZSP25XI datasheet(9/25 Pages) CYPRESS

Part #	CY14B108N-ZSP25XI

Description	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

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Manufacturer	CYPRESS [Cypress Semiconductor]

Direct Link	http://www.cypress.com

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9 / 25 page

CY14B108L

CY14B108N

Document #: 001-45523 Rev. *J

Page 9 of 25

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65

C to +150 C

Maximum accumulated storage time

At 150

C ambient temperature ...................... 1000 h

At 85

C ambient temperature ..................... 20 Years

Ambient temperature with

power applied .......................................... –55

C to +150 C

Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V

Voltage applied to outputs

in High Z state .................................... –0.5 V to VCC + 0.5 V

Input voltage ........................................–0.5 V to Vcc + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ................. –2.0 V to VCC + 2.0 V

Package power dissipation

capability (TA = 25 °C) ................................................. 1.0 W

Surface mount Pb soldering

temperature (3 Seconds) ......................................... +260

C

DC output current (1 output at a time, 1s duration) .... 15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) .......................... > 2001 V

Latch up current .................................................... > 200 mA

Operating Range

Range

Ambient Temperature

VCC

Industrial

–40

C to +85 C

2.7 V to 3.6 V

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7 V to 3.6 V)

Parameter

Description

Test Conditions

Min

Typ [8]

Max

Unit

VCC

Power supply

2.7

3.0

3.6

V

ICC1

Average VCC current

tRC = 20 ns

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

––

75

57

mA

ICC2

Average VCC current during

STORE

All inputs don’t care, VCC = Max

Average current for duration tSTORE

––

20

mA

ICC3

Average VCC current at

tRC= 200 ns, VCC(Typ), 25 °C

All inputs cycling at CMOS levels.

Values obtained without output loads

(IOUT = 0 mA).

–40–

mA

ICC4

Average VCAP current during

AutoStore cycle

All inputs don’t care. Average current

for duration tSTORE

––

10

mA

ISB

VCC standby current

CE > (VCC – 0.2 V).

VIN < 0.2 V or > (VCC – 0.2 V).

Standby current level after

nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

––

10

mA

IIX[9]

Input leakage current (except

HSB)

VCC = Max, VSS < VIN < VCC

–2

–

+2

A

Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC

–200

–

+2

A

IOZ

Off-state output leakage current VCC = Max, VSS < VOUT < VCC,

CE or OE > VIH or

BHE/BLE > VIH or WE < VIL

–2

–

+2

A

VIH

Input HIGH voltage

2.0

–

VCC + 0.5

V

VIL

Input LOW voltage

Vss – 0.5

–

0.8

V

VOH

Output HIGH voltage

IOUT = –2 mA

2.4

–

V

VOL

Output LOW voltage

IOUT = 4 mA

–

0.4

V

VCAP[10]

Storage capacitor

Between VCAP pin and VSS, 5 V rated

122

150

360

F

Notes

8. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.

9. The HSB pin has IOUT = –2 µA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

10. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor

on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore

it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options.

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