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CY7C1461AV33 Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CY7C1461AV33
Description  36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1461AV33 Datasheet(HTML) 1 Page - Cypress Semiconductor

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CY7C1461AV33
CY7C1463AV33, CY7C1465AV33
36-Mbit (1 M × 36/2 M × 18/512 K × 72)
Flow-Through SRAM with NoBL™ Architecture
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 38-05356 Rev. *I
Revised March 29, 2011
36-Mbit (1 M × 36/2 M × 18/512 K × 72) Flow-Through SRAM with NoBL™ Architecture
Features
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte write capability
3.3 V and 2.5 V IO power supply
Fast clock-to-output times
6.5 ns (for 133 MHz device)
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self timed writes
Asynchronous Output Enable
CY7C1461AV33,
CY7C1463AV33
available
in
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free and
non Pb-free 165-ball FBGA package. CY7C1465AV33
available in Pb-free and non-Pb-free 209-ball FBGA package
Three chip enables for simple depth expansion
Automatic power down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability — linear or interleaved burst order
Low standby power
Functional Description
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33[1] are
3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-Through
Burst SRAMs designed specifically to support unlimited true
back-to-back read and write operations without the insertion of
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is
equipped with the advanced NoBL logic required to enable
consecutive read and write operations with data being
transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133 MHz device).
Write operations are controlled by the two or four Byte Write
Select (BWX) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
133 MHz
100 MHz
Unit
Maximum Access Time
6.5
8.5
ns
Maximum Operating Current
310
290
mA
Maximum CMOS Standby Current
120
120
mA
Note
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.
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