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CY7C1081DV33-12BAXI Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1081DV33-12BAXI
Description  64-Mbit (4 M x 16) Static RAM 2.0-V data retention
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1081DV33-12BAXI Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1081DV33
Document #: 001-53992 Rev. *C
Page 6 of 13
AC Switching Characteristics
Over the Operating Range [5]
Parameter
Description
–12
Unit
Min
Max
Read Cycle
tpower
VCC(typ) to the first access [6]
100
s
tRC
Read cycle time
12
ns
tAA
Address to data valid
12
ns
tOHA
Data hold from address change
3
ns
tACE
CE1 LOW and CE2 HIGH to Data Valid
12
ns
tDOE
OE LOW to data valid
7
ns
tLZOE
OE LOW to low-Z
1
ns
tHZOE
OE HIGH to high-Z [7]
–7
ns
tLZCE
CE1 LOW and CE2 HIGH to low-Z [7]
3–
ns
tHZCE
CE1 HIGH and CE2 LOW to high-Z [7]
–7
ns
tPU
CE1 LOW and CE2 HIGH to power-up [8]
0–
ns
tPD
CE1 HIGH and CE2 LOW to power-down [8]
–12
ns
tDBE
Byte enable to data valid
7
ns
tLZBE
Byte enable to low-Z
1
ns
tHZBE
Byte disable to high-Z
7
ns
Write Cycle [9, 10]
tWC
Write cycle time
12
ns
tSCE
CE1 LOW and CE2 HIGH to write end
9
ns
tAW
Address setup to write end
9
ns
tHA
Address hold from write end
0
ns
tSA
Address setup to write start
0
ns
tPWE
WE pulse width
9
ns
tSD
Data setup to write end
7
ns
tHD
Data hold from write end
0
ns
tLZWE
WE HIGH to low-Z [7]
3–
ns
tHZWE
WE LOW to high-Z [7]
–7
ns
tBW
Byte enable to end of write
9
ns
Notes
5. Test conditions are based on signal transition time of 3 ns or less and timing reference levels of 1.5 V and input pulse levels of 0 to 3.0 V. Test conditions for the read
cycle use output loading shown in part a) of AC Test Loads and Waveforms[2], unless specified otherwise.
6. tpower is the minimum amount of time that the power supply must be at typical VCC values until the first memory access can be performed.
7. tHZOE, tHZCE, tHZWE, tHZBE and tLZOE, tLZCE, t\LZWE, tLZBE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms[2].
8. These parameters are guaranteed by design and are not tested.
9. The internal memory write time is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. Chip enables must be active and WE and byte enables must be LOW to
initiate a write, and the transition of any of these signals can terminate the write. The input data setup and hold timing must be referenced to the leading edge of the
signal that terminates the write.
10. The minimum write cycle time for Write Cycle 2 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
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