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CY7C1021CV26-15BAET Datasheet(PDF) 7 Page - Cypress Semiconductor |
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CY7C1021CV26-15BAET Datasheet(HTML) 7 Page - Cypress Semiconductor |
7 / 16 page CY7C1021CV26 Document Number: 38-05589 Rev. *F Page 7 of 16 Write Cycle[10] tWC Write cycle time 15 – ns tSCE CE LOW to write end 10 – ns tAW Address set-up to write end 10 – ns tHA Address hold from write end 0 – ns tSA Address set-up to write start 0 – ns tPWE WE pulse width 10 – ns tSD Data set-up to write end 8 – ns tHD Data hold from write end 0 – ns tLZWE WE HIGH to low Z[11] 3 – ns tHZWE WE LOW to high Z[11, 12] – 7 ns tBW Byte enable to end of write 9 – ns Switching Characteristics (continued) Over the Operating Range Parameter [6] Description -15 Unit Min Max Notes 10. The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a Write, and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 12. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of Figure 3 on page 6. Transition is measured 500 mV from steady-state voltage. [+] Feedback |
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