SML10L100

6/99

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

100

100

400

±30

±40

520

4.16

–55 to 150

300

100

50

2500

V

A

A

V

W

W/°C

°C

A

mJ

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

100V

100A

W

W

W

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO–264 Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G

19.51 (0.768)

26.49 (0.807)

1.80 (0.071)

2.01 (0.079)

4.60 (0.181)

5.21 (0.205)

2.79 (0.110)

3.18 (0.125)

5.45 (0.215) BSC

2 plcs.

0.76 (0.030)

1.30 (0.051)

2.29 (0.090)

2.69 (0.106)

2.59 (0.102)

3.00 (0.118)

0.48 (0.019)

0.84 (0.033)

123

3.10 (0.122)

3.48 (0.137)

TO–264AA Package Outline.

Dimensions in mm (inches)

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source