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STT8205S Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT8205S Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente STT8205S 6A, 20V, RDS(ON) 28m N-Channel Enhancement Mode Power MOSFET 0 9-Mar-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0V, ID=250μA Breakdown Voltage Temp. Coefficient BV △ DS/T △ j - 0.03 - V / °C Reference to 25°C, ID=1mA Gate-Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250μA Forward Transfer Conductance Gfs - 20 - S VDS=10V, ID=6A Gate-Body Leakage IGSS - - ±100 nA VGS=±10V Tj =25°C - - 1 μA VDS=16V,VGS=0 Zero Gate Voltage Drain Current Tj =75°C IDSS - - 25 μA VDS=16V,VGS=0 - - 28 VGS=4.5V, ID=6A Drain-Source On-Resistance 2 RDS(ON) - - 38 mΩ VGS=2.5V, ID=5.2A Total Gate Charge 2 Qg - 23 - Gate-Source Charge Qgs - 4.5 - Gate-Drain (“Miller”) Charge Qgd - 7 - nC ID=6A VDS=20V VGS=5V Turn-On Delay Time 2 Td(on) - 30 - Rise Time Tr - 70 - Turn-Off Delay Time Td(off) - 40 - Fall Time Tf - 65 - nS VDS=10V ID=1A VGS=5V RG=6Ω RD=10Ω Input Capacitance Ciss - 1035 - Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 150 - pF VGS=0 VDS=20V f=1.0MHz Source-Drain Diode Forward On Voltage 2 VDS - - 1.2 V IS=1.7A, VGS=0 Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300us, duty cycle≦2%. 3 Surface mounted on 1 in 2 copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. |
Similar Part No. - STT8205S_11 |
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Similar Description - STT8205S_11 |
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