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STT3998N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3998N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente 27-Aug-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 0.7 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - 1 uA VDS= 0V, VGS= 12V Zero Gate Voltage Drain Current IDSS - - 0.1 uA VDS= 16V, VGS= 0V - - 1 VDS= 16V, VGS= 0V, TJ= 55°C On-State Drain Current a ID(on) 30 - - A VDS = 5V, VGS= 4.5V Drain-Source On-Resistance a RDS(ON) - - 58 mΩ VGS= 4.5V, ID= 3.7A - - 82 VGS= 2.5V, ID= 2.7A Forward Transconductance a gfs - 10 - S VDS= 10V, ID= 6.8A Diode Forward Voltage a VSD - 0.8 - V IS= 1.05A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 7.5 - nC VDS= 10V, VGS= 4.5V, ID= 3.7A Gate-Source Charge Qgs - 0.6 - Gate-Drain Charge Qgd - 1.0 - Turn-on Delay Time Td(on) - 5 - nS VDD= 10V, VGS= 4.5V, RGEN= 15, ID= 1A Rise Time Tr - 12 - Turn-off Delay Time Td(off) - 13 - Fall Time Tf - 7 - Notes a. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. |
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