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STT3998N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3998N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente 27-Aug-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provide higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) (m ID(A) 20 58@VGS= 4.5V 3.7 82@VGS= 2.5V 3.1 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Maximum Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current a TA= 25°C ID 3.7 A TA= 70°C 2.9 Pulsed Drain Current b IDM 8 A Continuous Source Current (Diode Conduction) a IS 1.05 A Power Dissipation a TA= 25°C PD 1.15 W TA= 70°C 0.7 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction to Ambient a t ≦ 10 sec RJA 93 110 °C / W Steady State 130 150 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 G G S S D D |
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