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STT3981 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3981 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 5 page Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 m Ω P-Channel Enhancement Mode Mos.FET 010-Feb-2010 Rev. C Page 2 of 5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0, ID=250 uA Gate Threshold Voltage VGS(th) -0.4 - -1.1 V VDS = VGS, ID=250 uA Gate Leakage Current IGSS - - ±100 nA VGS = ±8 V Drain-Source Leakage Current (Tj=25℃) - - -1 VDS = -20 V, VGS = 0 Drain-Source Leakage Current (Tj=70℃) IDSS - - -20 uA VDS = -16 V, VGS = 0 - 100 150 VGS = -4.5 V, ID = -1.9 A - 160 210 VGS = -2.5 V, ID = -1.6 A Drain-Source On-Resistance RDS(ON) - 260 300 mΩ VGS = -1.8 V, ID = -0.7 A Forward Transconductance gfs - 4 - S VDS = -5V, ID = -1.9A Diode Forward Voltage 2 VSD - -0.84 -1.1 V IS = -1.0A, VGS = 0V Dynamic Total Gate Charge 2 Qg - 6 7.5 Gate-Source Charge Qgs - 0.52 - Gate-Drain (“Miller”) Charge Qgd - 1.02 - nC ID = -1.9 A VDS = -10 V VGS = -4.5 V Turn-on Delay Time 2 Td(on) - 50 65 Rise Time Tr - 40 60 Turn-off Time Td(off) - 168 180 Fall Time Tf - 64 75 nS VDS = -10 V ID = -1 A VGEN = -4.5 V RG = 6 Ω RL = 10 Ω Input Capacitance Ciss - 450 - Output Capacitance Coss - 60 - Reverse Transfer Capacitance Crss - 47 - pF VGS = 0 V VDS = -15 V f = 1.0 MHz Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad. |
Similar Part No. - STT3981_10 |
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Similar Description - STT3981_10 |
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