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STT3470N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3470N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 30-Dec-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - 1 A VDS= 80V, VGS= 0V - - 10 VDS= 80V, VGS= 0V, TJ= 55°C On-State Drain Current 1 ID(on) 10 - - A VDS = 5V, VGS= 10V Drain-Source On-Resistance 1 RDS(ON) - - 280 mΩ VGS= 10V, ID= 2.2A - - 355 VGS= 5.5V, ID= 2A Forward Transconductance 1 gfs - 11.3 - S VDS= 10V, ID= 2.2A Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 7.0 - nC VDS= 10V, VGS= 5.5V, ID= 2.2A Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 20 - Turn-on Delay Time Td(on) - 8 - nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A Rise Time Tr - 24 - Turn-off Delay Time Td(off) - 35 - Fall Time Tf - 10 - Notes: 1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. |
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