SSQ6N60 datasheet(2/4 Pages) SECOS

Part #	SSQ6N60

Description	N-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2 / 4 page

SSQ6N60

2.6A, 600V, RDS(ON) 1500mΩ

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

02-Dec-2010 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBO MIN.

TYP. MAX. UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

2

-

4

V

VDS= VGS, ID = 250 μA

Gate-Body Leakage

IGSS

-

±100

nA

VDS = 0V, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

-

25

μA

VDS= 600V, VGS= 0V

-

250

VDS= 480V,

VGS= 0V, TJ=125°C

On-State Drain Current

1

ID(on)

5

-

A

VDS = 10V, VGS= 10V

Drain-Source On-Resistance

1

RDS(ON)

-

1500

mΩ

VGS= 10V, ID= 2.2 A

Forward Transconductance

1

gfs

-

2.5

-

S

VDS= 40V, ID= 2.2 A

Diode Forward Voltage

VSD

-

1.4

-

V

IS= 2.6 A, VGS= 0 V

Dynamic

2

Total Gate Charge

Qg

-

16

-

nC

VDS = 480 V

VGS = 10 V

ID = 2.2 A

Gate-Source Charge

Qgs

-

3.4

-

Gate-Drain Charge

Qgd

-

8

-

Turn-on Delay Time

Td(on)

-

12.6

-

nS

VDD= 300 V

ID= 2.2 A

VGEN = 10 V

RL= 136 

RGEN = 12 

Rise Time

Tr

-

6.8

-

Turn-off Delay Time

Td(off)

-

26.4

-

Fall Time

Tf

-

8.8

-

Input Capacitance

CISS

-

557

-

pF

VDS = 25 V

VGS = 0 V

f = 1MHz

Output Capacitance

COSS

-

84

-

Reverse Transfer Capacitance

CRSS

-

20

-

Notes

1

Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.

2

Guaranteed by design, not subject to production testing.

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