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SSP7200N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSP7200N
Description  N-Channel Enhancement MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSP7200N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSP7200N
3 A, 200 V, RDS(ON) 400 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
30-Jul-2010 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBO MIN TYP MAX UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±
100
nA
VDS = 0V, VGS= 12V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 160V, VGS= 0V
-
-
5
VDS = 160V, VGS= 0V,TJ=55°C
On-State Drain Current
A
ID(ON)
40
-
-
A
VDS = 5V, VGS= 10V
Drain-Source On-Resistance
A
RDS(ON)
-
-
400
mΩ
VGS= 10V, ID = 3A
-
-
450
VGS= 4.5V, ID = 2.8A
Forward Transconductance
A
gFS
-
40
-
S
VDS= 15V,,ID = 3A
Diode Forward Voltage
VSD
-
0.7
-
V
IS= 2.3A, VGS= 0V
Dynamic
b
Total Gate Charge
Qg
-
15
-
nC
ID= 6A
VDS= 15V
VGS= 4.5V
Gate-Source Charge
Qgs
-
3
-
Gate-Drain Charge
Qgd
-
5
-
Turn-On Delay Time
Td(ON)
-
15
-
nS
ID= 1A, VDD= 15V
VGEN= 10V
RL= 6Ω
Rise Time
Tr
-
10
-
Turn-Off Delay Time
Td(OFF)
-
54
-
Fall Time
Tf
-
26
-
Notes
a.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.


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