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SSG9435P Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9435P Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  Elektronische Bauelemente SSG9435P -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET 14-Jan-2011 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - -1 VDS= -24V, VGS= 0V Zero Gate Voltage Drain Current IDSS - - -5 μA VDS= -24V, VGS= 0V, TJ=55°C On-State Drain Current 1 ID(on) -30 - - A VDS= -5V, VGS= -10V - - 49 VGS= -10V, ID= -5.7A Drain-Source On-Resistance 1 RDS(ON) - - 75 mΩ VGS= -4.5V, ID= -5.0A Forward Transconductance 1 gfs - 19 - S VDS= -15V, ID= -5.7A Diode Forward Voltage VSD - -0.7 - V IS= -2.1A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 6.4 - Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 2.5 - nC ID= -5.7A VDS= -15V VGS= -4.5V Switching Turn-On Delay Time Td(on) - 10 - Rise Time Tr - 2.8 - Turn-Off Delay Time Td(off) - 53.6 - Fall Time Tf - 46 - nS VDD= -15V ID= -1A VGEN= -10V RL= 15Ω RG= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. |
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