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IRFY9130 Datasheet(PDF) 2 Page - Seme LAB |
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IRFY9130 Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page IRFY9130 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/97 Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = -5.8A VGS = 10V ID = -9.3A VDS = VGS ID = 250µA VDS ≥ 15V IDS = -5.8A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = -9.3A VDS = 0.5BVDSS ID = -9.3A VDS = 0.5BVDSS VDD = -50V ID = -9.3A RG = 7.5Ω IS = -9.3A TJ = 25°C VGS = 0 IS = -9.3A TJ = 25°C di / dt ≤ 100A/µsVDD ≤ 50V ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -100 -0.1 0.31 0.36 -2 -4 2.5 -25 -250 -100 100 800 350 125 14.7 30 17.1 221 60 140 140 140 -9.3 -37 -4.7 250 3 8.7 8.7 V V/°C Ω V S( Ω µA nA pF nC nC ns A V ns µC nH BVDSS ∆BV DSS ∆T J RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS STATIC ELECTRICAL RATINGS DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from 6mm down drain lead pad to centre of die) Internal Source Inductance (from 6mm down source lead to centre of source bond pad) PACKAGE CHARACTERISTICS |
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