IRFY9130

Prelim. 4/97

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

-100

-0.1

0.31

0.36

-2

-4

2.5

-25

-250

-100

100

800

350

125

14.7

30

17.1

221

60

140

140

140

-9.3

-37

-4.7

250

3

8.7

8.7

V

V/°C

Ω

V

Ω

µA

nA

pF

nC

nC

ns

A

V

ns

µC

nH

∆BV

DSS

∆T

J

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down drain lead pad to centre of die)

PACKAGE CHARACTERISTICS