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SMG2343PE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2343PE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente 12-Nov-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) (m ID(A) -30 57@VGS= -10V -3.6 89@VGS= -4.5V -2.8 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current A TA=25°C ID -3.6 A TA=70°C -2.9 Pulsed Drain Current B IDM -10 A Continuous Source Current (Diode Conduction) A IS 0.4 A Power Dissipation A TA=25°C PD 1.25 W TA=70°C 0.8 Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE DATA Maximum Junction to Ambient A t ≦ 5 sec RθJA 100 °C / W Steady-State 150 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 ESD Protection Diode 2KV |
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