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VRF154FL Datasheet(PDF) 1 Page - Microsemi Corporation |
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VRF154FL Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page The VRF154FL is a gold-metallized silicon n-channel RF power transis- tor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. FEATURES • Improved Ruggedness V (BR)DSS = 170V • Designed for 2 - 100MHz Operation • 600W with 17dB Typical Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • Nitride Passivated • Economical Flangeless Package • Refractory Gold Metallization • High Voltage Replacement for MRF154 • RoHS Compliant Symbol Parameter VRF154FL(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain Current @ T C = 25°C 60 A V GS Gate-Source Voltage ±40 V P D Total Device dissipation @ T C = 25°C 1350 W T STG Storage Temperature Range -65 to 150 °C T J Operating Junction Temperature Max 200 RF POWER VERTICAL MOSFET Maximum Ratings All Ratings: T C =25°C unless otherwise specified Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = 0V, ID = 100mA) 170 180 V V DS(ON) On State Drain Voltage (I D(ON) = 40A, VGS = 10V) 3.0 5.0 I DSS Zero Gate Voltage Drain Current (V DS = 100V, VGS = 0V) 4.0 mA I GSS Gate-Source Leakage Current (V DS = ±20V, VDS = 0V) 4.0 μA g fs Forward Transconductance (V DS = 10V, ID = 40A) 16 mhos V GS(TH) Gate Threshold Voltage (V DS = 10V, ID = 100mA) 2.9 3.6 4.4 V Microsemi Website - http://www.microsemi.com Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θJC Junction to Case Thermal Resistance 0.13 °C/W R θJHS Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.22 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. D G S S VRF154FL VRF154FLMP 50V, 600W, 80MHz |
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