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SD101BW Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SD101BW Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente SD101AW/SD101BW/SD101CW Voltage: 40V~60V Plastic-Encapsulate Schottky Diodes 10-Nov-2009 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Cathode Band G E A J F D H C B 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time MARKING : SD101AW: S1 SD101BW: S2 SD101CW: S3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at TA = 25°C PARAMETER SYMBOL SD101AW SD101BW SD101CW UNIT Peak Repetitive Peak Reverse voltage VRM 60 50 40 V Working Peak VRWM 60 50 40 V DC Blocking Voltage VR 60 50 40 V RMS Reverse Voltage VR(RMS) 42 35 28 V Forward Continuous Current IFM 15 mA @t<1.0S 50 mA Repetitive Peak Forward Current @t=10 µS IFRM 2.0 A Power Dissipation PD 400 mW Thermal Resistance Junction to Ambient R θJA 300 °C/W Storage Temperature TSTG -65~125 °C ELECTRICAL RATING at TA = 25°C PARAMETERS SYMBOL MIN. MAX. UNIT TEST CONDITIONS SD101AW 60 SD101BW 50 Reverse Breakdown Voltage SD101CW V(BR)R 40 V IR = 10 µA SD101AW 0.41 SD101BW 0.40 Forward Voltage SD101CW VF1 0.39 mV IF =1.0mA SD101AW 1.00 SD101BW 0.95 Forward Voltage SD101CW VF2 0.90 IF =15mA SD101AW 0.2 VR = 50V SD101BW 0.2 VR = 40V Reverse Current SD101CW IRM 0.2 µA VR = 30V SD101AW 2.0 SD101BW 2.1 Capacitance between Terminals SD101CW CT 2.2 pF VR =0V, f=1.0MHz Reverse Recovery Time Trr 1.0 ns IF = IR =5mA, Irr=0.1XIR, RL =100 SOD-123 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.95 1.35 F 1.40 1.80 B 0.10 REF. G 2.55 2.85 C 1.05 1.15 H 3.55 3.85 D 0.30 0.78 J - - E 0.08 0.25 |
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