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MMDT4401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMDT4401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente * Features ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Power Dissipation. Marking : K2X PCM : 0.2 W (Temp.=25 C) Collector Current O ICM : 0.6 A Collector-Base vVoltage V(BR) CBO : 60 V Operating & Storage Junction Temperature Tj,Tstg : -55 C ~ +150 C O O 01-J an-2006 Rev.B Page 1 of 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=35 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 µA hFE(1) VCE=1 V, IC= 0.1mA 20 hFE(2) VCE=1 V, IC= 1mA 40 hFE(3) VCE=1 V, IC= 10mA 80 hFE(4) VCE=1 V, IC= 150mA 100 300 DC current gain hFE(5) VCE=2 V, IC= 500mA 40 VCE(sat)1 IC=150 mA, IB=15mA 0.4 V Collector-emitter saturation voltage VCE(sat)2 IC=500 mA, IB=50mA 0.75 V VBE(sat)1 IC= 150 mA, IB=15mA 0.75 0.95 V Base-emitter saturation voltage VBE(sat)2 IC= 500 mA, IB=50mA 1.2 V Transition frequency f T VCE= 10V, IC= 20mA f = 100MHz 250 MHz Output Capacitance Cob VCB=5V, IE= 0 f=1MHz 6.5 pF Delay time td 15 nS Rise time tr VCC=30V, VBE=2V IC=150mA , IB1=15mA 20 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1= IB2= 15mA 30 nS C 2 B 1 E 1 E 2 B 2 C 1 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 |
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