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TPS65735RSNT Datasheet(PDF) 10 Page - Texas Instruments |
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TPS65735RSNT Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 36 page  TPS65735 SLVSAI6 – JUNE 2011 www.ti.com Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOVP Input over-voltage protection VVIN: 5 V → 7 V 6.4 6.6 6.8 V threshold VHYS-OVP Hysteresis on OVP VVIN: 11 V → 5 V 105 mV VDO(VIN- VIN pin to SYS pin dropout voltage ISYS = 150 mA (including IBAT) 350 mV SYS) VVIN – VSYS VVIN = 4.35 V VBAT = 3.6 V VDO(BAT- BAT pin to SYS pin dropout voltage ISYS = 100 mA 150 mV SYS) VBAT – VSYS VVIN = 0 V VBAT > 3 V IVIN(MAX) Maximum power path input current VVIN = 5 V 200 mA at pin VIN VSUP(ENT) Enter battery supplement mode VSYS ≤ V (VBAT - 40 mV) VSUP(EXIT) Exit battery supplement mode VSYS ≥ V (VBAT - 20 mV) VSUP(SC) Output short-circuit limit in 250 mV supplement mode VO(SC) Output short-circuit detection 0.9 V threshold, power-on BATTERY CHARGER ICC Active supply current into VIN pin VVIN = 5 V 2 mA No load on SYS pin VBAT > VBAT(REG) IBAT(SC) Source current for BAT pin 1 mA short-circuit detection VBAT(SC) BAT pin short-circuit detection 1.6 1.8 2.0 V threshold VBAT(REG) Battery charger output voltage –1% 4.20 1% V VLOWV Pre-charge to fast-charge transition 2.9 3.0 3.1 V threshold ICHG Charger fast charge current range VVIN = 5 V 5 100 mA ICHG = KISET / RISET VBAT(REG) > VBAT > VLOWV KISET Battery fast charge current set factor VVIN = 5 V –20% 450 20% A Ω ICHG = KISET / RISET IVIN(MAX) > ICHG ICHG = 100 mA No load on SYS pin, thermal loop not active. IPRECHG Pre-charge current 0.07 × 0.10 × 0.15 × mA ICHG ICHG ICHG ITERM Charge current value for termination ICHG = 100 mA 7 10 15 mA detection threshold VRCH Recharge detection threshold VBAT below nominal charger voltage, 55 100 170 mV VBAT(REG) IBAT(DET) Sink current for battery detection 1 mA tCHG Charge safety timer 18000 s (18000 seconds = 5 hours) tPRECHG Pre-charge timer 1800 s (1800 seconds = 30 minutes) VDPPM DPPM threshold VBAT + V 100 mV ILEAK(nCHG) Leakage current for nCHG_STAT VnCHG_STAT = 4.2 V 100 nA pin CHG_EN = LOW (Charger disabled) RDSON(nCH On resistance for nCHG_STAT 20 60 Ω G) MOSFET switch 10 POWER MANAGEMENT CORE Copyright © 2011, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS65735 |
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