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APTGT300A120D3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT300A120D3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGT300A120D3G www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 500 µA Tj = 25°C 1.7 2.1 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 300A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 12mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Cres Reverse Transfer Capacitance VGE = 0V ; VCE = 25V f = 1MHz 1 nF QG Gate charge VGE=±15V, IC=300A VCE=600V 2.8 µC Td(on) Turn-on Delay Time 250 Tr Rise Time 90 Td(off) Turn-off Delay Time 550 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω 130 ns Td(on) Turn-on Delay Time 300 Tr Rise Time 100 Td(off) Turn-off Delay Time 650 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω 180 ns Eon Turn on Energy Tj = 125°C 25 Eoff Turn off Energy VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω Tj = 125°C 44 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 1200 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 750 IRRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 1.6 2.1 VF Diode Forward Voltage IF = 300A VGE = 0V Tj = 125°C 1.6 V Tj = 25°C 170 trr Reverse Recovery Time Tj = 125°C 280 ns Tj = 25°C 28 Qrr Reverse Recovery Charge Tj = 125°C 56 µC Tj = 25°C 12 Err Reverse Recovery Energy IF = 300A VR = 600V di/dt =3500A/µs Tj = 125°C 22 mJ |
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