D2203 datasheet(1/2 Pages) SEME-LAB

Part #	D2203

Description	METAL GATE RF SILICON FET

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Manufacturer	SEME-LAB [Seme LAB]

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D2203UK

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 9/95

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage *

BVGSS

Gate – Source Breakdown Voltage *

ID(sat)

Drain Current *

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

35W

40V

±20V

4A

–65 to 150°C

200°C

MECHANICAL DATA

C

A

O

NM

K

J

I

H

G

F

E

D

B

1

54

3

2

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 12.5V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from DC to 2 GHz

METAL GATE RF SILICON FET

TetraFET

DIM

mm

Tol.

Inches

Tol.

A

16.38

0.26

0.645

0.010

B

1.52

0.13

0.060

0.005

C

45°

5°

45°

5°

D

6.35

0.13

0.250

0.005

E

3.30

0.13

0.130

0.005

F

14.22

0.13

0.560

0.005

G

1.27 x 45°

0.13

0.05 x 45°

0.005

H

1.52

0.13

0.060

0.005

I

6.35

0.13

0.250

0.005

J

0.13

0.02

0.005

0.001

K

2.16

0.13

0.085

0.005

M

1.52

0.13

0.060

0.005

N

5.08

MAX

0.200

MAX

O

18.90

0.13

0.744

0.005

DQ

PIN 1

SOURCE (COMMON)

PIN 3

DRAIN 2

PIN 5

GATE 1

PIN 2

DRAIN 1

PIN 4

GATE 2

* Per Side

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