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BD439 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BD439 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  -Jun-2002 Rev. A Page 1 of 2 01 Elektronische Bauelemente BD439/BD441 NPN Type Plastic Encapsulate Transistors TO-126 8.0±0.2 1: Emitter 2: Collector 3: Base 4.14±0.1 11.0±0.2 1.4±0.1 15.3±0.2 1.27±0.1 2.28 Typ. 4.55±0.1 0.5±0.1 2.0±0.2 3.2±0.2 1 2 3 0.76±0.1 Dimensions in Millimeters O2.8±0.1 O 3.2±0.1 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Features * Amplifier and switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol mete Value Units VCBO Collector-Base Voltage BD439 BD441 60 80 V VCEO Collector-Emitter Voltage BD439 BD441 60 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 4 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Para C o C o C o ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA,IE=0 BD439 BD441 60 80 V Collector-emitter breakdown voltage V(BR)CEO Ic= 100mA,IB=0 BD439 BD441 60 80 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 BD439 VCB=80V,IE=0 BD441 100 μ A Emitter cut-off current IEBO VEB= 5V,IE=0 1 mA hFE(1) VCE= 1V,IC=500mA 40 475 hFE(2) VCE= 5V,IC=10mA BD439 BD441 20 15 DC current gain hFE(3) VCE= 1V,IC=2A BD439 BD441 25 15 Collector-emitter saturation voltage VCE(sat) IC=3A,IB=0.3A 0.8 V Base-emitter voltage VBE VCE= 1V,IC=2A 1.1 V Transition frequency fT VCE= 1V,IC=250mA 3 MHz RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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