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1N5419 Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N5419 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright © 2008 6-11-2008 REV B S C O T TS DALE DIVISION 1N5415 thru 1N5420 DESCRIPTION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. “E” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N5415 to 1N5420 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 50 to 600 Volts. • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/411 • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5415US thru 1N5420US) • Fast recovery 3 Amp rectifiers 50 to 600 V • Military and other high-reliability applications • General rectifier applications including bridges, half-bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65 oC to +175oC • Storage Temperature: -65 oC to +175oC • Thermal Resistance: 20 oC/W junction to lead at 3/8 inch (10 mm) lead length from body • Thermal Impedance: 1.5 oC/W @ 10 ms heating time • Average Rectified Forward Current (IO): 3 Amps @ TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1) • Forward Surge Current (8.3 ms half sine): 80 Amps • Solder temperatures: 260 oC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper except for JANS with solid Silver (Ag) and no finish • MARKING: Body paint and part number, etc. • POLARITY: Cathode band • TAPE & REEL option: Standard per EIA-296 • WEIGHT: 750 mg • See package dimensions on last page ELECTRICAL CHARACTERISTICS FORWARD VOLTAGE VF @ 9 A MAXIMUM REVERSE CURRENT IR @ VRWM AVERAGE RECTIFIED CURRENT IO (NOTE 1) TYPE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA VOLTS MIN. VOLTS MAX. VOLTS 25 oC µA 100 oC µA MAXIMUM REVERSE RECOVERY TIME trr (NOTE 2) ns 55 oC AMPS 100 oC AMPS 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 50V 100V 200V 400V 500V 600V 55V 110V 220V 440V 550V 660V 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 150 150 150 150 250 400 3.0 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 2.0 NOTE 1: From 3.0 Amps at TA = 55 oC, derate linearly at 22 mA/ oC to 2.0 Amps at T A = 100 oC. Above T A = 100 oC, derate linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A |
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