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TLE8209-2SA Datasheet(PDF) 7 Page - Infineon Technologies AG |
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TLE8209-2SA Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 38 page Data Sheet 7 Rev. 1.0, 2010-02-16 TLE8209-2SA General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings 1) T j = -40 °C to 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Test Conditions / Comment Min. Max. 4.1.1 Junction temperature T j -40 150 150 175 °C– 100h cumulative 4.1.2 Storage temperature T s -55 150 °C– 4.1.3 Ambient temperature T a -40 125 °C– 4.1.4 Battery supply voltage V S -0.5 40 V Static destruction proof -2 40 V Dynamic destruction proof t < 0.5 s (single pulse, T jstart < 85 °C) 4.1.5 Logic supply voltage V DD -0.5 18 V – 4.1.6 Supply for logic out V DDIO -0.5 18 V – 4.1.7 Voltage at logic pins ABE, IN1, IN2, DIS, SCK, SS/SF, SI V IN -0.5 18 V – 4.1.8 Voltage at SO V SO -0.5 V DDIO +0.3 V– 4.1.9 Voltage at CP V CP V S-0.3 V S+5.0 V 0V < V S < 40V 4.1.10 Voltage at GNDABE V GNDABE V GND-0.3 V GND+0.3 V ESD Susceptibility 4.1.11 ESD Resistivity to GND V ESD -2 2 kV HBM2) 2) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5k Ω, 100pF) 4.1.12 -8 8 kV HBM2), Pins OUT1 and OUT2 4.1.13 -500 500 V CDM3) 3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 4.1.14 -750 750 V CDM3), Pins 1, 10, 11, 20 |
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