Data Sheet

7

Rev. 1.0, 2010-02-16

TLE8209-2SA

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

T

(unless otherwise specified)

1) Not subject to production test, specified by design.

Pos.

Parameter

Symbol

Limit Values

Unit

Test Conditions / Comment

Min.

Max.

4.1.1

Junction temperature

T

j

-40

150

150

175

°C–

100h cumulative

4.1.2

Storage temperature

T

s

-55

150

°C–

4.1.3

Ambient temperature

T

a

-40

125

°C–

4.1.4

Battery supply voltage

V

S

-0.5

40

V

Static destruction proof

-2

40

V

Dynamic destruction proof

T

4.1.5

Logic supply voltage

V

DD

-0.5

18

V

–

4.1.6

Supply for logic out

V

DDIO

-0.5

18

V

–

4.1.7

Voltage at logic pins

ABE, IN1, IN2, DIS, SCK,

SS/SF, SI

V

IN

-0.5

18

V

–

4.1.8

Voltage at SO

V

SO

-0.5

V

DDIO

+0.3

V–

4.1.9

Voltage at CP

V

CP

V

V

V

0V <

V

4.1.10

Voltage at GNDABE

V

GNDABE

V

V

V

ESD Susceptibility

4.1.11

ESD Resistivity to GND

V

ESD

-2

2

kV

2) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5k

Ω, 100pF)

4.1.12

-8

8

kV

HBM2), Pins OUT1 and OUT2

4.1.13

-500

500

V

3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101

4.1.14

-750

750

V

CDM3), Pins 1, 10, 11, 20