D1053UK datasheet(1/2 Pages) SEME-LAB

Part #	D1053UK

Description	METAL GATE RF SILICON FET

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Manufacturer	SEME-LAB [Seme LAB]

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D1053UK

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 3/95

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage

BVGSS

Gate – Source Breakdown Voltage

ID(sat)

Drain Current

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

175W

70V

±20V

5A

–65 to 150°C

200°C

MECHANICAL DATA

E

K

F

I

J

H

N

M

3

5

2

4

8

6

9

7

O

(2 pls)

C

(2 pls)

D

G

1

A

B

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

50W – 28V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 7.5 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 400 MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

DIM

mm

Tol.

Inches

Tol.

A

1.52

0.13

0.060

0.005

B

1.52

0.13

0.060

0.005

C

45°

5°

45°

5°

D

16.38

0.26

0.645

0.010

E

6.35

0.13

0.250

0.005

F

18.41

0.13

0.725

0.005

G

12.70

0.26

0.500

0.010

H

5.08

0.13

0.200

0.005

I

24.76

0.13

0.975

0.005

J

1.52

0.13

0.060

0.005

K

0.81R

0.13

0.032R

0.005

M

0.13

0.02

0.005

0.001

N

2.16

0.13

0.085

0.005

O

1.65R

0.13

0.065R

0.005

DB

PIN 1

SOURCE (COMMON)

PIN 3

DRAIN 2

PIN 5

DRAIN 4

PIN 7

GATE 3

PIN 9

GATE 1

PIN 2

DRAIN 1

PIN 4

DRAIN 3

PIN 6

GATE 4

PIN 8

GATE 2

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