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2N4126 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N4126 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page 2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 29-Dec-2010 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector A C E K F D B G H J RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -4 V Collector Current - Continuous IC -0.2 A Collector Power Dissipation PC 625 mW Thermal Resistance Junction to Ambient RθJA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO -25 - - V IC= -0.01mA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V IC=-1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -4 - - V IE= -0.01mA, IC = 0A Collector Cut-Off Current ICBO - - -50 nA VCB=- 20V, IE = 0 A Emitter Cut-Off Current IEBO - - -50 nA VEB= -3V, IC = 0 mA DC Current Gain hFE (1)* 120 - 360 VCE= -1V, IC= -2 mA hFE (2)* 60 - - VCE= -1V, IC=-50mA Collector to Emitter Saturation Voltage VCE(sat)* - - -0.4 V IC=-50mA, IB=-5mA Base to Emitter Saturation Voltage VBE(sat)* - - -0.95 V IC=-50mA, IB=-5mA Collector output Capacitance Cob - - 4.5 pF VCB = -5V, IE = 0A, f=1MHz Transition Frequency fT 250 - - MHz VCE = -20V, IC = -10mA, f=100MHz *Pulse test:pulse width ≦ 300s, duty cycle ≦ 1.5%. TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Emitter Base Collector |
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