SPB11N60C3 datasheet(9/13 Pages) INFINEON

Part #	SPB11N60C3

Description	Cool MOS Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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9 / 13 page

200

7-12-14

Rev. 2.

6

Page 9

SPB11N60C3

17 Typ. drain source voltage slope

dv/dt

= f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=11A

0

10

20

30

40

50

Ω

70

RG

10

20

30

40

50

60

70

80

90

100

110

120

V/ns

140

dv/dt(off)

dv/dt(on)

18 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=6.8Ω

0

2

4

6

8

A

12

ID

0

0.005

0.01

0.015

0.02

0.025

0.03

mWs

0.04

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

19 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=11A

0

10

20

30

40

50

Ω

70

RG

0

0.04

0.08

0.12

0.16

mWs

0.24

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

20 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

1

2

3

4

5

6

7

8

9

A

11

Tj(START)=125°C

Tj(START)=25°C

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