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SIGC42T60SNC Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SIGC42T60SNC Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page SIGC42T60SNC Edited by INFINEON Technologies AI PS DD HV3, L 7272-S, Edition 2, 28.11.2003 MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C V CE 600 V DC collector current, limited by Tjmax I C 1 ) A Pulsed collector current, tp limited by Tjmax I cpuls 150 A Gate emitter voltage V GE ±20 V Operating junction and storage temperature Tj, Tstg -55 ... +150 °C 1 ) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Symbol Conditions min. typ. max. Unit Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=2mA 600 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=50A 1.7 2 2.5 Gate-emitter threshold voltage VGE(th) IC=1mA, VGE=VCE 3 4 5 V Zero gate voltage collector current ICES VCE=600V, VGE=0V 3.5 µA Gate-emitter leakage current IGES VCE=0V, VGE=20V 120 nA DYNAMIC CHARACTERISTICS (tested at component): Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss - 2660 3190 Output capacitance Coss - 250 300 Reverse transfer capacitance Crss V CE=25V V GE=0V f =1MHz - 153 182 pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Value Parameter Symbol Conditions 2) min. typ. max. Unit Turn-on delay time t d(on) - 55 77 Rise time t r - 40 56 Turn-off delay time t d(off) - 380 532 Fall time t f Tj=150 ° C V CC =400V I C =50A V GE=+15/0V RG=6.8Ω - 80 112 ns 2) switching conditions different to 600V Standard IGBT 2, under comparable switching conditions 40% faster turnoff than Standard IGBT 2. Values also influenced by parasitic L- and C- in measurement and package. |
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