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SIDC46D170H Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIDC46D170H Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIDC46D170H Edited by INFINEON Technologies AI DP PSD CLS, L 4471A, Edition 2, 2.11.2004 Fast switching diode chip in EMCON 3 -Technology This chip is used for: • EUPEC power modules FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Applications: • resonant applications, drives A C Chip Type VR IF Die Size Package Ordering Code SIDC46D170H 1700V 75A 6.8 x 6.8 mm 2 sawn on foil Q67050-A4175- A001 MECHANICAL PARAMETER: Raster size 6.8 x 6.8 Area total / active 46.24 / 34.04 Anode pad size 4.78 x 4.78 mm 2 Thickness 200 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 304 pcs Passivation frontside Photoimide Anode metallization 3200 nm Al Si Cu Cathode metallization Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤500µm Reject Ink Dot Size ∅ 0.65mm; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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