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SDT12S60 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # SDT12S60
Description  Silicon Carbide Schottky Diode
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SDT12S60 Datasheet(HTML) 5 Page - Infineon Technologies AG

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200
8-06-03
Rev. 2.
3
Page 5
SDT12S60
SDT12S60
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
100 150 200 250 300 350 400 450 500 V 600
VR
-3
10
-2
10
-1
10
0
10
1
10
2
10
µA
150°C
125°C
100°C
25°C
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDT12S60
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
7 Typ. capacitance vs. reverse voltage
C
= f(VR)
parameter: TC = 25 °C, f = 1 MHz
10
0
10
1
10
2
10
3
V
VR
0
50
100
150
200
250
300
350
400
450
500
pF
600
8 Typ. C stored energy
EC=f(VR)
0
100
200
300
400
V
600
VR
0
1
2
3
4
5
6
7
µJ
9


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