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PTFA241301E Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # PTFA241301E
Description  Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFA241301E Datasheet(HTML) 2 Page - Infineon Technologies AG

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PTFA241301E
PTFA241301F
Data Sheet
2 of 12
Rev. 05, 2007-05-11
*See Infineon distributor for future availability.
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 130 W PEP, ƒ = 2420 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
13.0
14
—
dB
Drain Efficiency
ηD
36
38
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.07
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 1150 mA
VGS
2
2.4
3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
438
W
Above 25°C derate by
2.5
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 130 W CW)
RθJC
0.40
°C/W
Ordering Information
Type
Package Outline
Package Description
Marking
PTFA241301E
H-30260-2
Thermally-enhanced slotted flange, single-ended
PTFA241301E
PTFA241301F
H-31260-2
Thermally-enhanced earless flange, single-ended
PTFA241301F


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