PTFA220121M datasheet(10/19 Pages) INFINEON

Part #	PTFA220121M

Description	High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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10 / 19 page

PTFA220121M

Confidential, Limited Internal Distribution

Data Sheet

10 of 19

Rev. 07, 2010-04-15

Two-carrier WCDMA 3GPP

VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz

3GPP WCDMA, P/AR = 8:1, 10 MHz carrier

spacing, BW 3.84 MHz

13

14

15

16

17

18

24

26

28

30

32

34

36

38

Output Power (dBm)

0

10

20

30

40

50

Efficiency

Gain

Two-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz

3GPP WCDMA, P/AR = 8:1, 10 MHz carrier

spacing, BW 3.84 MHz

-50

-45

-40

-35

-30

-25

-20

-15

-10

32

33

34

35

36

37

38

Output Power (dBm)

0

5

10

15

20

25

30

35

40

Efficiency

IMD Up

IMD Low

ACPR

Typical Performance, 2140 MHz (data taken in Infineon test fixture)

Two-tone Drive-up

VDD = 28 V, IDQ = 150 mA,

ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz

-40

-35

-30

-25

-20

-15

33

34

35

36

37

38

39

40

41

42

43

Output Power, PEP (dBm)

10

20

30

40

50

60

Efficiency

IMD3

Two-tone Drive-up

VDD = 28 V, IDQ = 150 mA,

ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz

14

15

16

17

18

36

37

38

39

40

41

42

43

Output Power, PEP (dBm)

10

20

30

40

50

Efficiency

Gain

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PTFA220121M Datasheet(PDF) 10 Page - Infineon Technologies AG

PTFA220121M Datasheet(HTML) 10 Page - Infineon Technologies AG

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