PTFA220081M datasheet(1/17 Pages) INFINEON

Part #	PTFA220081M

Description	High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

RF Characteristics

Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)

VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

17

—

dB

Drain Efficiency

hD

—

38

—

%

Intermodulation Distortion

IMD

—

–31

—

dBc

High Power RF LDMOS Field Effect Transistor

8 W, 700 – 2200 MHz

Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for

power amplifiers applications with frequencies from 700 MHz to 2200

MHz. This LDMOS transistor offers excellent gain, efficiency and

linearity performance in a small overmolded plastic package.

PTFA220081M

Package PG-SON-10

Features

• Typical two-carrier WCDMA performance,

8 dB PAR

- POUT = 33 dBm Avg

- ACPR = –40 dBc

• Typical CW performance, 940 MHz, 28 V

- POUT = 40 dBm

- Efficiency = 59%

- Gain = 20 dB

• Typical CW performance, 2140 MHz, 28 V

- POUT = 40 dBm

- Efficiency = 50%

- Gain = 15 dB

• Capable of handling 10:1 VSWR @ 28 V, 8 W

(CW) output power

• Integrated ESD protection : Human Body Model,

Class 2 (minimum)

• Excellent thermal stability

• Pb-free and RoHS compliant

0

10

20

30

40

50

-60

-50

-40

-30

-20

-10

34

35

36

37

38

39

40

41

Output Power, PEP (dBm)

Two-tone Drive-up

VDD = 28 V, IDQ = 100 mA,

ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz

Efficiency

IMD 3rd

IMD 5th

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PTFA220081M Datasheet(PDF) 1 Page - Infineon Technologies AG

PTFA220081M Datasheet(HTML) 1 Page - Infineon Technologies AG

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