PTFA220081M datasheet(5/17 Pages) INFINEON

Part #	PTFA220081M

Description	High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 17 page

PTFA220081M

Confidential, Limited Internal Distribution

Data Sheet

5 of 17

Rev. 04, 2010-06-09

Reference Circuit, 920 – 960 MHz

Reference circuit input schematic for ƒ = 920 – 960 MHz

Reference circuit output schematic for ƒ = 920 – 960 MHz

1

2

3

TL101

R101

1300 Ohm

C101

1000 pF

R102

1200 Ohm

C102

1000 pF

R103

2000 Ohm

R104

10 Ohm

TL102

C103

1000 pF

TL103

TL104

TL105

TL106

TL107

TL108

TL109

1

2

3

4

TL110

PORT

3

C

B

E

1

2

3

4

S4

In

Out

NC

1

2 3

4

5

6

7

8

S5

3

S3

1

2

3

4

S2

R105

1.3 Ohm

1

2

3

TL111

1

2

3

TL112

C104

16 pF

C105

68 pF

L1

22 nH

C106

5.6 pF

C107

16 pF

R106

510 Ohm

R107

10 Ohm

TL113

TL114

a080304m_960 MHz_bdin_06-03-2010

RF_IN

GATE_DUT

VDD

RF_OUT

R201

0 Ohm

1

2

3

TL201

1

2

3

TL202

TL203

TL204

TL205

TL206

C201

3.6 pF

TL207

TL208

1

2

3

TL209

TL210

TL211

TL212

TL213

C202

68 pF

C203

68 pF

TL214

1

2

3

TL215

TL216

TL217

TL218

TL219

TL220

1

2

3

TL221

TL222

C204

10000000 pF

1

2

3

TL223

C205

4710000 pF

1

2

3

TL224

1

2

3

TL225

a080304m_960 MHz_bdout_06-03-2010

DRAIN_DUT

VDD

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PTFA220081M Datasheet(PDF) 5 Page - Infineon Technologies AG

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