PTF180101S datasheet(3/10 Pages) INFINEON

Part #	PTF180101S

Description	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

3 of 10

Rev. P03, 2007-03-01

PTF180101S

EDGE Modulation Spectrum Performance

VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz

-100

-90

-80

-70

-60

-50

25

30

35

40

Output Power (dBm)

0

10

20

30

40

50

Efficiency

400 kHz

600 kHz

1

2

3

4

5

6

7

8

0.00

0.05

0.10

0.15

0.20

0.25

0.30

Quiscent Drain Current (A)

-110

-100

-90

-80

-70

-60

-50

-40

EVM and Modulation Spectrum Performance

f = 1989.8 MHz, POUT = 3.5 W

EVM

400 kHz

600 kHz

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–0.5 to +12

V

Junction Temperature

TJ

200

°C

Total Device Dissipation

PD

58

W

Above 25°C derate by

0.333

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 10 W CW)

RθJC

3.0

°C/W

Ordering Information

Type

Package Outline

Package Description

Marking

PTF180101S

H-32259-2

Thermally enhanced, surface mount

PTF180101S

Typical Performance measurements taken in broadband test fixture

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PTF180101S Datasheet(PDF) 3 Page - Infineon Technologies AG

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