IPD35N10S3L-26 datasheet(6/9 Pages) INFINEON

Part #	IPD35N10S3L-26

Description	OptiMOS-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD35N10S3L-26

9 Typ. gate threshold voltage

10 Typ. capacitances

V GS(th) = f(T j); V GS = V DS

C = f(V DS); V GS = 0 V; f = 1 MHz

parameter: I D

11 Typical forward diode characteristicis

12 Typ. avalanche characteristics

IF = f(VSD)

I A S= f(t AV)

parameter: T j

parameter: Tj(start)

25 °C

175 °C

10

3

10

2

10

1

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V SD [V]

40 µA

200 µA

0

0.5

1

1.5

2

2.5

-60

-20

20

60

100

140

180

T j [°C]

Ciss

Coss

Crss

10

2

10

3

10

4

0

5

10

15

20

25

30

V DS [V]

10

1

25 °C

100 °C

150 °C

0.1

1

10

100

0.1

1

10

100

1000

t AV [µs]

25 °C

175 °C

10

0

10

1

10

2

10

3

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V SD [V]

Rev. 1.0

page 6

2008-04-21

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IPD35N10S3L-26 Datasheet(PDF) 6 Page - Infineon Technologies AG

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