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IPB180N04S4-00 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPB180N04S4-00 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPB180N04S4-00 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 38 40 42 44 -60 -20 20 60 100 140 180 T j [°C] 8 V 32 V 0 2 4 6 8 10 12 0 40 80 120 160 200 240 Q gate [nC] 180 A 90 A 45 A 0 500 1000 1500 2000 2500 3000 25 75 125 175 T j [°C] V GS Q gate Q gs Q gd Q g V GS Q gate Q gs Q gd Q g Rev. 1.0 page 7 2010-04-06 |
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