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IPB160N04S4-H1 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPB160N04S4-H1 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPB160N04S4-H1 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - - - 0.9 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm 2 cooling area3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=110 µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.05 1 µA V DS=18 V, V GS=0 V, T j=85 °C 2) -1 20 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=100 A - 1.4 1.6 mΩ Values Rev. 1.0 page 2 2010-04-13 |
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