IPB80N04S2-H4 datasheet(3/9 Pages) INFINEON

Part #	IPB80N04S2-H4

Description	OptiMOS Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB80N04S2-H4

IPP80N04S2-H4, IPI80N04S2-H4

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

4400

-

pF

Output capacitance

C oss

-

1800

-

Reverse transfer capacitance

Crss

-

480

-

Turn-on delay time

t d(on)

-23

-

ns

Rise time

t r

-63

-

Turn-off delay time

t d(off)

-46

-

Fall time

t f

-22

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-21

29

nC

Gate to drain charge

Q gd

-38

70

Gate charge total

Q g

-

103

148

Gate plateau voltage

V plateau

-

4.9

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

80

A

Diode pulse current

2)

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=80 A,

T j=25 °C

-

0.9

1.3

V

Reverse recovery time

2)

t rr

V R=20 V, I F=I S,

di F/dt =100 A/µs

-

195

-

ns

Reverse recovery charge

2)

Q rr

V R=20 V, I F=I S,

di F/dt =100 A/µs

-

370

-

nC

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 0.5K/W the chip is able to carry 200A at 25°C. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

T C=25 °C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=20 V, V GS=10 V,

I D=80 A, R G=1.3 Ω

V DD=32 V, I D=80 A,

V GS=0 to 10 V

Rev. 1.1

page 3

2008-02-22

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