NTD4965N-1G datasheet(5/7 Pages) ONSEMI

Part #	NTD4965N-1G

Description	Power MOSFET 30 V, 68 A, Single N?묬hannel, DPAK/IPAK

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NTD4965N

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5

TYPICAL PERFORMANCE CURVES

0 V < VGS < 10 V

Single Pulse

TC = 25°C

015

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

5

TJ = 25°C

Coss

Crss

Ciss

Figure 8. Gate−to−Source and Drain−to−Source

Voltage vs. Total Charge

4

0

QG, TOTAL GATE CHARGE (nC)

2

8

ID = 30 A

TJ = 25°C

VDD = 15 V

VGS = 10 A

QT

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (W)

VGS = 0 V

Figure 10. Diode Forward Voltage vs. Current

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

20

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = 28 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

30

6

Qgs

VGS = 0 V

Qgd

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10 ms

100 ms

1 ms

10 ms

dc

VDD = 15 V

ID = 15 A

VGS = 10 V

td(off)

td(on)

tf

tr

1

10

3

5

7

9

10

25

0

200

400

600

800

1000

1200

1400

1800

1600

2000

2200

2400

06

28

12

410

14

20

16

22

26

18

24

28

1

10

1

10

100

1000

0

10

0.4

0.7

1.0

20

30

5

15

25

0.5

0.8

0.6

0.9

TJ = 125°C

1

10

1

10

100

1000

0.1

0.01

0.1

0.01

0

4

8

12

16

20

24

28

32

36

40

25

50

75

100

125

150

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NTD4965N-1G Datasheet(PDF) 5 Page - ON Semiconductor

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