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NTMS4916NR2G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMS4916NR2G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTMS4916N http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 16 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 1.7 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 12 A 6.75 9.0 mW VGS = 4.5 V, ID = 10 A 9.0 12 Forward Transconductance gFS VDS = 1.5 V, ID = 7.5 A 23 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1376 pF Output Capacitance Coss 401 Reverse Transfer Capacitance Crss 205 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 7.5 A 15 nC Threshold Gate Charge QG(TH) 2.44 Gate−to−Source Charge QGS 4 Gate−to−Drain Charge QGD 6.5 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 7.5 A 28 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 9.4 ns Rise Time tr 7.4 Turn−Off Delay Time td(off) 32 Fall Time tf 15.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.740 1.0 V TJ = 125°C 0.570 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 2.0 A 30.7 ns Charge Time ta 14.3 Discharge Time tb 16.4 Reverse Recovery Charge QRR 20 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 0.66 nH Drain Inductance LD 0.2 Gate Inductance LG 1.5 Gate Resistance RG 0.77 W 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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