NTMS4916NR2G datasheet(2/5 Pages) ONSEMI

Part #	NTMS4916NR2G

Description	Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

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NTMS4916N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

16

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 30 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

1.7

2.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

5

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 12 A

6.75

9.0

mW

VGS = 4.5 V, ID = 10 A

9.0

12

Forward Transconductance

gFS

VDS = 1.5 V, ID = 7.5 A

23

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

1376

pF

Output Capacitance

Coss

401

Reverse Transfer Capacitance

Crss

205

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V, ID = 7.5 A

15

nC

Threshold Gate Charge

QG(TH)

2.44

Gate−to−Source Charge

QGS

4

Gate−to−Drain Charge

QGD

6.5

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V, ID = 7.5 A

28

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 15 V,

ID = 1.0 A, RG = 6.0 W

9.4

ns

Rise Time

tr

7.4

Turn−Off Delay Time

td(off)

32

Fall Time

tf

15.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 2.0 A

TJ = 25°C

0.740

1.0

V

TJ = 125°C

0.570

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 2.0 A

30.7

ns

Charge Time

ta

14.3

Discharge Time

tb

16.4

Reverse Recovery Charge

QRR

20

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

0.66

nH

Drain Inductance

LD

0.2

Gate Inductance

LG

1.5

Gate Resistance

RG

0.77

W

3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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